| It is proposed that the wafer thickness in a LPCVD reactor could be made more uniform if the temperature were to be increased along the length of the reactor. The feed composition is 15% A and 85% carrier gas and enters at 1000 K and 1 torr (1mmHg). Determine the temperature profile to achieve uniform thickness at the center of the wafer. Also determine the wafer shape as a function of distance down the reactor. (Note: The feed composition as well as flow rate can also be varied.) | ||
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[2nd Ed. P11-18]