(CVD boat reactor)

(a) With increasing temperature, the wafer thickness increases to some maximum value, then decreases. Explain!
(b) How do the wafer thickness and curvature vary as the pressure is increased from a very low pressure to a high pressure?
(c) What are the effects of wafer radius and wafer spacing on the curvature and thickness of the wafer?
(d) What are the effects of volumetric flow rate and entering concentration on wafer thickness and curvature?

Hint: You may want to program Equations (E12-5.11) and (E12-5.12) to carry out a series of computer simulations to help answer these questions. Parameter values are given in Problem CDP12-D.