Elements of
Chemical Reaction Engineering
6th Edition



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Essentials of
Chemical Reaction Engineering
Second Edition

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Chapter 4: Stoichiometry

Additional Homework Problems

CDP4-JB

Chemical Vapor Deposition (CVD) is a process used in the microelectronics industry to deposit thin films of constant thickness on silicon wafers. This process is of particular importance in the manufacturing of very large scale integradted circuits. One of the common coatings is Si3N4, which is produced according to the reaction.

3SiH4(g) + 4NH3(g) Si3N4(s) + 12H2(g)

This dielectric is typically more resistant to oxidation than are other coatings. Set up a stoichiometric table for this reaction and plot the concentration of each species as a function of conversion. The entering pressure is 1 Pa and the temperature is constant at 700. The feed is equilmolar in NH3 and SiH4.