The chemical vapor deposition of silica from TEOS (tetrethyl othosilicate)
is carried out in a batch from the gas phase. The following data were obtained.
r DepRate (nm/s) |
P TEOS(atm) |
(atm) |
|
.1 |
.1 |
0 |
0 |
.4 |
.2 |
0 |
0 |
1.5 |
.4 |
0 |
0 |
9.1 |
1 |
5 |
10 |
9.1 |
1 |
0 |
0 |
500 |
10 |
0 |
10 |
500 |
10 |
0 |
0 |
4167 |
50 |
50 |
50 |
9091 |
100 |
0 |
50 |
19048 |
200 |
0 |
50 |
39024 |
400 |
1 |
50 |
99010 |
1000 |
100 |
50 |
a) Suggest a rate law from the above data.
b) Suggest a mechanism and rate limiting step consistent with the rate law.