1st International Workshop on Bismuth-Containing Semiconductors:
Theory, Simulation, and Experiment

July 14 – 16, 2010

Registration Deadline: May 14, 2010

Workshop organized by The Michigan Center for Theoretical Physics and Materials World Network on III-V Bismide Materials for IR and Mid IR Semiconductors sponsored by the National Science Foundation

Workshop Home
Invited Speakers
Scientific Program
Hotel Block
Social Activities: Welcoming Reception, Tour & Canoe trip!
Travel/Visitor Information

Workshop Venue:
Palmer Commons

Lecture Hall: Forum Hall (4th floor)

University of Michigan
Central Campus Map

This workshop will be held July 14-16, 2010 on the University of Michigan's central campus with a welcoming reception planned for the evening of Tuesday, July 13th. The goal of this workshop is to bring together experimentalists and theoreticians who study Bi-containing materials for optoelectronics and thermoelectrics. All talks will be brief with plenty of time set aside for discussion. Specific topics will include:

  • Bismide growth and bismuth incorporation strategies

  • Structural, electrical, and optical characterization

  • Theoretical studies of bismide semiconductor properties and device physics

  • Device fabrication and performance

Registration deadline: May 14, 2010

*Limited travel support will be available on as-needed basis.
Travel support request deadline: June 1, 2010






Workshop Organizers:
Joanna Millunchick

University of Michigan

Shane Johnson
Arizona State University

Program Committee

Workshop Secretary:
Angela Milliken
University of Michigan
450 Church Street
Ann Arbor MI 48109-1040
[P] 734-763-9698
[F] 734-763-2213